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2SK3000
Silicon N Channel MOS FET Low Frequency Power Switching
REJ03G0379-0300Z (Previous ADE-208-585A (Z)) Rev.3.00 Jun.15.2004
Features
* Low on-resistance RDS(on) = 0.16 typ. (VGS = 10 V, ID = 450 mA) * 4 V gate drive devices. * Small package (MPAK) * Expansive drain to source surge power capability
Outline
MPAK
D 3
3
2 G
1
1
1. Source 2. Gate 3. Drain
2
S
Note: Marking is "ZY-".
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Symbol VDSS VGSS ID ID(pulse)Note1 IDR Ratings 40 10 1.0 4.0 1.0 400 150 -55 to +150 Unit V V A A A mW C C
Channel dissipation Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW 10 s, duty cycle 1 % t 2. When using the glass epoxy board (10 mm x 10 mm x 1 mm )
Rev.3.00, Jun.16.2004, page 1 of 6
2SK3000
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Drain to source voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Notes: 3. Pulse test Symbol V(BR)DSS VDS(SUS) V(BR)GSS IDSS IGSS VGS(off) |yfs| RDS(on) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Min 40 40 10 -- -- 1.1 0.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- 1.2 0.24 0.16 14.0 68 3.0 0.12 0.6 1.7 1.4 Max 60 -- -- 1.0 5 2.1 -- 0.5 0.3 -- -- -- -- -- -- -- Unit V V V A A V S pF pF pF s s s s Test Conditions ID = 100 A, VGS = 0 L = 100 H, ID = 3 A IG = 100 A, VDS = 0 VDS = 40 V, VGS = 0 VGS = 6.5V, VDS = 0 ID = 10 A, VDS = 5 V ID = 450 mA, VDS = 10 V Note3 ID = 450 mA, VGS = 4V Note3 ID = 450 mA, VGS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz VGS = 4 V, ID = 450 mA RL = 22
Rev.3.00, Jun.16.2004, page 2 of 6
2SK3000
Main Characteristics
Power vs. Temperature Derating 0.8
Pch (W) I D (A)
5 2 1 0.5 0.2 0.1 0.05 0.02 0.01
Maximum Safe Operation Area 50 s
0. 1 s m
1
10
0.6
m
s
PW
m
Channel Dissipation
Drain Current
s
= 10
0.4
0.2
Operation in this area is limited by R DS(on) Ta = 25C
0.5 1 2 5
DC
0 m s (1 o sh t)
No 4 te
ra pe O n tio
0
50
100
150
200
0.05 0.2
10 20
50 100 200
Ambient Temperature
Ta (C)
Drain to Source Voltage
V DS (V)
Note4 : When using the glass epoxy board (10mm x 10mm x 1mm t) Typical Output Characteristics 5.0 10 V 6 V 5V 4.5 V 3.0 3.5 V 2.0 3V VGS = 2.5 V 0 2 4 6 Drain to Source Voltage 8 V DS (V) 10 100 0 1 2 3 Gate to Source Voltage 10 Pulse Test 4V
I D (A)
Typical Transfer Characteristics
I D (A)
4.0
1 25C 100m 125C Tc = -25C 10m
Drain Current
1.0
Drain Current
1m V DS = 5 V Pulse Test 4 5 VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage V DS(on) (V)
Pulse Test
Drain to Source On State Resistance R DS(on) ( )
1.0
Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test 3 1 0.3 0.1 VGS = 4 V 10 V
0.8
0.6
0.4
ID=2A 1A 0.45 A
0.2
0.03 0.01 0.01 0.03
0
4
8
12
16
20
0.1
0.3
1
3
10
Rev.3.00, Jun.16.2004, page 3 of 6
2SK3000
Static Drain to Source on State Resistance vs. Temperature 0.5 Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |y fs | (S)
Static Drain to Source on State Resistance R DS(on) ()
10 5 Tc = -25C 2 1 75C 0.5 25C
0.4
ID = 0.45 A
0.3
VGS = 4 V 0.45 A 10 V
Pulse Test 80 120 160 Tc (C)
0.2
0.1 0 -40
0.2 0.1 0.1
V DS = 10 V Pulse Test 0.2 0.5 1 2 5 Drain Current I D (A) 10
0
40
Case Temperature
Typical Capacitance vs. Drain to Source Voltage 500 200
Capacitance C (pF)
Switching Characteristics 5000 2000 1000 500 t d(off) tf tr
VGS = 0 f = 1 MHz Coss
100 50 20 10 5
Ciss
Switching Time t (ns)
200 100 50 0.05 0.1
t d(on) V GS = 4 V, V DD = 10 V PW = 5 s, duty < 1 % 0.2 0.5 Drain Current 2 1 I D (A) 5
Crss 2 1 0 4 8 12 16 20 Drain to Source Voltage V DS (V)
Drain to Source DiodeReverse Surge Destruction Characteristics 500
Reverse Drain Current I DR (A)
Reverse Drain Current vs. Source to Drain Voltage 5 10 V 4 5V V GS = 0
Applied Power Ps (W)
200 100 50 20 10 5 0.05 0.1 0.2 0.5 1 2
Ta = 25C 1 shot
3
2
1 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V)
5 10 20
50
Surge Pulse Width PW (mS)
Rev.3.00, Jun.16.2004, page 4 of 6
2SK3000
Transient Thermal Resistance 1000
300
Thermal Resistance j-a (C/W)
100
30
10 Condition : Ta = 25C When using the glass epoxy board (10mm x 10mm x 1mmt ) 10 m 100 m 1 10 Pulse Width PW (S) 100 1000
3 1 1m
Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 4V 50 V DD = 10 V Vout Vout Monitor
Switching Time Waveforms
90% 10% 10% 90% td(on) tr 90% td(off) tf 10%
Rev.3.00, Jun.16.2004, page 5 of 6
2SK3000
Package Dimensions
As of January, 2003
Unit: mm
0.65
0.10 0.4 + 0.05 -
0.16 - 0.06
+ 0.10
1.5 0.15
+ 0.2 - 0.6
0 - 0.1
0.95
0.95
1.9 0.2 2.95 0.2
0.3
+ 0.2 1.1 - 0.1
0.65
2.8
Package Code JEDEC JEITA Mass (reference value)
MPAK(T) -- Conforms 0.011 g
Ordering Information
Part Name 2SK3000 Quantity 3000 pcs Shipping Container 178 mm Reel Taping (TL)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.3.00, Jun.16.2004, page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
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